STW43NM50N
MOSFET N-CH 500V 37A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW43NM50N, an N-Channel Power MOSFET from the MDmesh™ II series, offers a 500V drain-source voltage and a continuous drain current of 37A at 25°C (Tc). This through-hole component, housed in a TO-247-3 package, features a maximum power dissipation of 255W (Tc) and a low on-resistance of 85mOhm at 18.5A and 10V Vgs. With a gate charge of 140 nC at 10V and input capacitance of 4200 pF at 50V, this MOSFET is suitable for high-efficiency power switching applications. It operates at junction temperatures up to 150°C and is commonly utilized in power supplies, consumer electronics, and industrial automation.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 18.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 255W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 50 V |
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