STW40N60M2-4
MOSFET N-CH 600V 34A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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This STMicroelectronics MDmesh™ II Plus series N-channel MOSFET, part number STW40N60M2-4, offers a 600V breakdown voltage and a continuous drain current of 34A at 25°C. Designed for demanding applications, it features a low Rds(on) of 88mOhm at 17A and 10V, with a gate charge of 57nC and input capacitance of 2500pF. The device is housed in a TO-247-3 package, suitable for through-hole mounting, and supports a maximum power dissipation of 250W (Tc). This component is utilized across industries such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: MDmesh™ II PlusRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 88mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 100 V |
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