STW38N65M5-4
MOSFET N-CH 650V 30A TO247-4LManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW38N65M5-4 is a 650V N-Channel Power MOSFET from the MDmesh™ M5 series. This component offers a continuous drain current of 30A (Tc) and a maximum power dissipation of 190W (Tc). Key electrical characteristics include a low on-resistance of 95mOhm at 15A and 10V, and a gate charge of 71nC at 10V. The STW38N65M5-4 features a drain-to-source voltage (Vdss) of 650V and is designed for a gate drive voltage up to 10V. Its input capacitance (Ciss) is specified at a maximum of 3000pF at 100V. This through-hole device is packaged in a TO-247-4 configuration. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications in high-voltage power conversion, including switch-mode power supplies (SMPS), power factor correction (PFC), and industrial power applications.
Additional Information
Series: MDmesh™ M5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 100 V |
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