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STW37N60DM2AG

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STW37N60DM2AG

MOSFET N-CH 600V 28A TO247

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STW37N60DM2AG is an N-Channel Power MOSFET from the MDmesh™ DM2 series. This component features a 600 V breakdown voltage (Vdss) and a continuous drain current (Id) of 28 A at 25°C (Tc). The device offers a low on-resistance (Rds(on)) of 110 mOhm at 14 A and 10 V, with a gate charge (Qg) of 54 nC at 10 V. Engineered for high-power applications, it supports a maximum power dissipation of 210 W (Tc). The STW37N60DM2AG is housed in a TO-247-3 package for through-hole mounting and operates across a temperature range of -55°C to 150°C. This component is AEC-Q101 qualified and suitable for automotive applications, as well as industrial power supplies and motor control.

Additional Information

Series: MDmesh™ DM2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Rds On (Max) @ Id, Vgs110mOhm @ 14A, 10V
FET Feature-
Power Dissipation (Max)210W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-247-3
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2400 pF @ 100 V
QualificationAEC-Q101

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