STW36NM60ND
MOSFET N-CH 600V 29A TO247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW36NM60ND is an N-channel Power MOSFET from the FDmesh™ II series, designed for demanding applications. This device features a drain-source breakdown voltage (Vdss) of 600 V and a continuous drain current (Id) of 29 A at 25°C (Tc). The Rds On is specified at a maximum of 110 mOhm at 14.5 A and 10 V gate drive voltage. Key characteristics include a gate charge (Qg) of 80.4 nC at 10 V and input capacitance (Ciss) of 2785 pF at 50 V. With a maximum power dissipation of 190 W (Tc) and an operating junction temperature of 150°C, it is housed in a TO-247-3 package suitable for through-hole mounting. This component is qualified to AEC-Q101, making it suitable for automotive applications.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 80.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2785 pF @ 50 V |
| Qualification | AEC-Q101 |
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