STW35N65M5
MOSFET N-CH 650V 27A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW35N65M5 is a 650V N-Channel Power MOSFET from the MDmesh™ V series. This device offers a continuous drain current of 27A (Tc) at 25°C and a maximum power dissipation of 160W (Tc). Key parameters include a low on-resistance of 98mOhm at 13.5A and 10V, a gate charge (Qg) of 83 nC @ 10V, and input capacitance (Ciss) of 3750 pF @ 100V. The MOSFET is housed in a TO-247-3 package for through-hole mounting and operates at junction temperatures up to 150°C. This component is suitable for high-voltage applications in power factor correction, switch-mode power supplies, and industrial power systems.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3750 pF @ 100 V |
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