STW34NB20
MOSFET N-CH 200V 34A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW34NB20, an N-Channel Power MOSFET from the PowerMESH™ series, offers robust performance with a 200V drain-source voltage and 34A continuous drain current at 25°C. This device features a maximum on-resistance of 75mOhm at 17A and 10V Vgs, facilitated by a 10V drive voltage. Key parameters include a gate charge of 80 nC at 10V and an input capacitance of 3300 pF at 25V. The STW34NB20 dissipates up to 180W and operates at junction temperatures up to 150°C. Packaged in a TO-247-3 through-hole configuration, this MOSFET is suitable for applications in industrial power supplies, automotive systems, and motor control.
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 25 V |
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