STW30NM50N
MOSFET N-CH 500V 27A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW30NM50N, an N-Channel Power MOSFET from the MDmesh™ II series, offers a 500V drain-source voltage and a continuous drain current of 27A at 25°C (Tc). This through-hole component, housed in a TO-247-3 package, features a maximum power dissipation of 190W (Tc) and a low on-resistance of 115mOhm at 13.5A and 10V Vgs. Key electrical parameters include a gate charge of 94 nC (max) at 10V and input capacitance of 2740 pF (max) at 50V. The operating junction temperature reaches 150°C, with a ±25V gate-source voltage limit and a 4V gate threshold voltage. This device is suitable for applications in power supply systems, industrial power control, and renewable energy inverters.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2740 pF @ 50 V |
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