STW30N20
MOSFET N-CH 200V 30A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ STW30N20 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 30A at 25°C (Tc), with a maximum power dissipation of 125W (Tc). The STW30N20 offers a low on-resistance (Rds On) of 75mOhm at 15A and 10V, contributing to reduced conduction losses. Key parameters include a gate charge (Qg) of 38 nC (max) at 10V and input capacitance (Ciss) of 1597 pF (max) at 25V. The device is housed in a TO-247-3 package for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in industrial and consumer electronics, power supplies, and motor control systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1597 pF @ 25 V |
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