STW29NK50ZD
MOSFET N-CH 500V 29A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STW29NK50ZD is a SuperMESH™ N-Channel MOSFET designed for demanding power applications. This component features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 29A at 25°C, with a maximum power dissipation of 350W (Tc). The device exhibits a low on-resistance (Rds On) of 130mOhm at 14.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 200nC @ 10V and input capacitance (Ciss) of 6450pF @ 25V. The STW29NK50ZD is housed in a TO-247-3 through-hole package, suitable for industrial power supplies, motor control, and lighting applications. It operates within a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage of ±30V.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 150µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6450 pF @ 25 V |
Request a Quote
Clients Also Buy
STN1NK60Z
MOSFET N-CH 600V 300MA SOT223
STD3NK80ZT4
MOSFET N-CH 800V 2.5A DPAK
STF3NK80Z
MOSFET N-CH 800V 2.5A TO220FP
