STW28NM60ND
MOSFET N-CH 600V 23A TO247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW28NM60ND is a 600V N-Channel Power MOSFET from the FDmesh™ II series. This component features a continuous drain current of 23A at 25°C (Tc) and a maximum power dissipation of 190W (Tc). The drain-to-source voltage (Vdss) is rated at 600V, with a maximum gate-source voltage (Vgs) of ±25V. It offers a low Rds On of 150mOhm maximum at 11.5A and 10V Vgs. Key parameters include a gate charge (Qg) of 62.5 nC maximum at 10V Vgs and an input capacitance (Ciss) of 2090 pF maximum at 100V Vds. The device operates at a junction temperature up to 150°C. Packaged in a TO-247-3 through-hole configuration, this MOSFET is suitable for applications in power supplies, motor control, and lighting.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 62.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2090 pF @ 100 V |
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