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STW28NK60Z

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STW28NK60Z

MOSFET N-CH 600V 27A TO247-3

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STW28NK60Z is a SuperMESH™ N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 27A at 25°C (Tc). With a maximum power dissipation of 350W (Tc) and a low on-resistance (Rds On) of 185mOhm at 13.5A and 10V, it delivers excellent performance. The device is housed in a TO-247-3 package, suitable for through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 264 nC @ 10V and input capacitance (Ciss) of 6350 pF @ 25V. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is utilized in power supplies, motor control, and industrial applications requiring robust power handling.

Additional Information

Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C27A (Tc)
Rds On (Max) @ Id, Vgs185mOhm @ 13.5A, 10V
FET Feature-
Power Dissipation (Max)350W (Tc)
Vgs(th) (Max) @ Id4.5V @ 150µA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs264 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6350 pF @ 25 V

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