STW27NM60ND
MOSFET N-CH 600V 21A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW27NM60ND, an N-channel Power MOSFET from the FDmesh™ II series, offers a 600V drain-source breakdown voltage and a continuous drain current of 21A at 25°C (Tc). This through-hole TO-247-3 packaged device features a maximum power dissipation of 160W (Tc) and an Rds(On) of 160mOhm at 10.5A and 10V gate-source voltage. Designed for robust performance, it operates at junction temperatures up to 150°C. The STW27NM60ND is AEC-Q101 qualified, making it suitable for automotive applications, including electric vehicle power management and charging systems. It also finds use in industrial power supplies and motor control applications.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Qualification | AEC-Q101 |
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