STW26NM60ND
MOSFET N-CH 600V 21A TO247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW26NM60ND, an N-Channel Power MOSFET from the FDmesh™ II series, offers a 600V drain-source voltage (Vdss). This through-hole component, packaged in a TO-247-3, provides a continuous drain current (Id) of 21A at 25°C (Tc) and a maximum power dissipation of 190W (Tc). Key electrical characteristics include a maximum on-resistance (Rds On) of 175mOhm at 10.5A and 10V, and a gate charge (Qg) of 54.6 nC at 10V. Input capacitance (Ciss) is rated at 1817 pF at 100V. The device supports a gate-source voltage (Vgs) range of ±25V, with a threshold voltage (Vgs(th)) of 5V at 250µA. The STW26NM60ND is suitable for applications in power supply units and industrial motor control.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 54.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1817 pF @ 100 V |
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