STW26NM60
MOSFET N-CH 600V 30A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW26NM60 is an N-Channel Power MOSFET from the MDmesh™ series, designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 30 A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 135 mOhm at 13 A and 10 V. With a maximum power dissipation of 313 W (Tc), it offers excellent thermal performance. The MOSFET is housed in a TO-247-3 package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 102 nC at 10 V and input capacitance (Ciss) of 2900 pF at 25 V. This component is utilized in power supply units, industrial automation, and renewable energy systems.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 313W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 102 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V |
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