STW26NM50
MOSFET N-CH 500V 30A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STW26NM50 is an N-Channel MDmesh™ MOSFET designed for high-efficiency power conversion applications. This component features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 30A at 25°C (Tc). With a maximum power dissipation of 313W (Tc) and a low on-resistance (Rds On) of 120mOhm at 13A and 10V, it is optimized for reduced conduction losses. The device has a typical gate charge (Qg) of 106 nC at 10V and input capacitance (Ciss) of 3000 pF at 25V. The STW26NM50 utilizes advanced MOSFET technology and is housed in a TO-247-3 through-hole package, suitable for demanding power supplies, industrial motor control, and lighting applications. The maximum operating junction temperature is 150°C.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 313W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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