STW25NM60N
MOSFET N-CH 600V 21A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW25NM60N is an N-Channel Power MOSFET from the MDmesh™ II series. This device offers a 600V drain-to-source voltage rating and a continuous drain current of 21A (Tc) at 25°C. With a maximum on-resistance of 160mOhm at 10.5A and 10V gate-source voltage, it features a low gate charge of 84 nC (max) at 10V and an input capacitance of 2400 pF (max) at 50V. The component is housed in a TO-247-3 package for through-hole mounting and supports a maximum power dissipation of 160W (Tc). This MOSFET is suitable for applications in power supplies, motor control, and lighting.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 50 V |
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