STW25N95K3
MOSFET N-CH 950V 22A TO247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW25N95K3 is a SuperMESH3™ N-Channel Power MOSFET. This device features a maximum drain-source voltage (Vds) of 950V and a continuous drain current rating (Id) of 22A at 25°C. The on-resistance (Rds On) is specified at 360mOhm maximum at 11A and 10V Vgs. Key characteristics include a gate charge (Qg) of 105 nC maximum at 10V and input capacitance (Ciss) of 3680 pF maximum at 100V. The maximum power dissipation is 400W at 25°C case temperature. This MOSFET is packaged in a TO-247-3 through-hole configuration. The STW25N95K3 is suitable for applications in high-voltage power conversion, including switch-mode power supplies and industrial motor control.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 150µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 950 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3680 pF @ 100 V |
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