STW24NK55Z
MOSFET N-CH 550V 23A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW24NK55Z SuperMESH™ N-Channel Power MOSFET. This device features a 550V drain-to-source voltage (Vds) and a continuous drain current (Id) of 23A at 25°C (Tc). The Rds(On) is specified at a maximum of 220mOhm at 11.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 130nC (Max) at 10V and input capacitance (Ciss) of 4397.5pF (Max) at 25V. With a maximum power dissipation of 285W (Tc) and an operating junction temperature of 150°C, this through-hole component is housed in a TO-247-3 package. It is suitable for applications in power supply, industrial, and automotive sectors.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 285W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4397.5 pF @ 25 V |
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