STW23NM60ND
MOSFET N-CH 600V 19.5A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW23NM60ND is a 600V N-Channel Power MOSFET from the FDmesh™ II series. This through-hole component features a continuous drain current of 19.5A (Tc) and a maximum power dissipation of 150W (Tc). The Rds On is specified at 180mOhm maximum at 10A, 10V. Key parameters include a Vgs of ±25V maximum, a gate charge of 70 nC typical at 10V, and an input capacitance of 2050 pF maximum at 50V. This device is suitable for applications in industrial power supplies and high-voltage switching, operating at junction temperatures up to 150°C. The TO-247-3 package is supplied in tubes.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 50 V |
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