STW23NM60N
MOSFET N-CH 600V 19A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STW23NM60N is an N-Channel Power MOSFET from the MDmesh™ II series. This device features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 19 A at 25°C (Tc). It offers a maximum on-resistance (Rds On) of 180 mOhm at 9.5 A and 10 V gate-source voltage. The MOSFET has a maximum power dissipation of 150 W (Tc) and a junction temperature rating of 150°C (TJ). Key characteristics include a gate charge (Qg) of 60 nC (Max) at 10 V and input capacitance (Ciss) of 2050 pF (Max) at 50 V. The STW23NM60N is housed in a TO-247-3 package, suitable for through-hole mounting. This component is utilized in applications such as power supplies and industrial motor control.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 50 V |