STW23NM50N
MOSFET N-CH 500V 17A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STW23NM50N is an N-Channel Power MOSFET from the MDmesh™ II series. This through-hole component features a drain-source voltage of 500 V and a continuous drain current of 17 A at 25°C (Tc). The device offers a maximum on-resistance of 190 mOhm at 8.5 A and 10 V gate-source voltage. With a gate charge of 45 nC (max) at 10 V and input capacitance of 1330 pF (max) at 50 V, it is designed for efficient switching. The STW23NM50N has a maximum power dissipation of 125 W (Tc) and operates at junction temperatures up to 150°C. The TO-247-3 package is suitable for applications in power factor correction and switched-mode power supplies.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 50 V |
Request a Quote
Clients Also Buy
STD13NM60N
MOSFET N-CH 600V 11A DPAK
STD14NM50NAG
MOSFET N-CH 500V 12A DPAK
STD8NM50N
MOSFET N-CH 500V 5A DPAK
