STW22NM60N
MOSFET N-CH 600V 16A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW22NM60N is an N-Channel Power MOSFET from the MDmesh™ II series. This device features a 600 V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 16 A at 25°C (Tc). With a maximum power dissipation of 125 W (Tc), it is suitable for demanding applications. The on-resistance (Rds On) is specified at 220 mOhm maximum at 8 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 44 nC maximum at 10 V and input capacitance (Ciss) of 1330 pF maximum at 50 V. The STW22NM60N utilizes a TO-247-3 through-hole package. This component is commonly employed in power supply, industrial, and automotive applications requiring efficient high-voltage switching.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 50 V |
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