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STW220NF75

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STW220NF75

MOSFET N-CH 75V 120A TO247-3

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STripFET™ II series N-Channel Power MOSFET, part number STW220NF75. This component features a Drain-Source voltage (Vdss) of 75V and a continuous drain current (Id) of 120A at 25°C (Tc). The Rds(on) is specified at a maximum of 4.4mOhm at an Id of 60A and Vgs of 10V. Key parameters include a gate charge (Qg) of 430nC (max) at 10V and input capacitance (Ciss) of 12500pF (max) at 25V. With a maximum power dissipation of 500W (Tc), this MOSFET is suitable for demanding applications. The STW220NF75 utilizes Metal Oxide semiconductor technology and is housed in a TO-247-3 package for through-hole mounting. Typical applications include power switching and power management in industrial and automotive sectors. It is designed for optimal performance with a Vgs(th) of 4V (max) at 250µA and a Vgs (max) of ±20V.

Additional Information

Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs4.4mOhm @ 60A, 10V
FET Feature-
Power Dissipation (Max)500W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds12500 pF @ 25 V

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