STW21NM60ND
MOSFET N-CH 600V 17A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW21NM60ND is a 600V N-Channel Power MOSFET from the FDmesh™ II series. This device features a continuous drain current of 17A at 25°C (Tc) and a maximum power dissipation of 140W (Tc). The drain-to-source voltage (Vdss) is 600V, with a gate-source voltage (Vgs) range of ±25V. The on-resistance (Rds On) is a maximum of 220mOhm at 8.5A and 10V Vgs. Key parameters include input capacitance (Ciss) of 1800pF at 50V Vds and gate charge (Qg) of 60nC at 10V Vgs. The component is housed in a TO-247-3 package designed for through-hole mounting and operates at junction temperatures up to 150°C. This MOSFET is utilized in applications such as power factor correction, switch mode power supplies, and motor control.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 50 V |
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