STW21NM60N
MOSFET N-CH 600V 17A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW21NM60N is a 600V N-Channel Power MOSFET from the MDmesh™ series. This through-hole component, packaged in a TO-247-3, offers a continuous drain current of 17A (Tc) and a maximum power dissipation of 140W (Tc). Key electrical characteristics include a low on-resistance of 220mOhm at 8.5A and 10V, and a gate charge of 66nC at 10V. The device features a drain-source voltage (Vdss) of 600V and can operate at junction temperatures up to 150°C. This MOSFET is suitable for applications in power factor correction, switch mode power supplies, and industrial motor control.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 50 V |
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