STW21NM50N
MOSFET N-CH 500V 18A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW21NM50N is an N-Channel Power MOSFET from the MDmesh™ II series, featuring a 500 V drain-source voltage and a continuous drain current of 18 A at 25°C (Tc). This through-hole component, housed in a TO-247-3 package, offers a maximum power dissipation of 140 W (Tc). Key electrical characteristics include a maximum Rds(on) of 190 mOhm at 9 A and 10 V, an input capacitance (Ciss) of 1950 pF at 25 V, and a gate charge (Qg) of 65 nC at 10 V. The device operates at junction temperatures up to 150°C and is suitable for applications in power supply, lighting, and industrial motor control sectors.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 25 V |
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