STW21N65M5
MOSFET N-CH 650V 17A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STW21N65M5 is an N-channel MOSFET from the MDmesh™ V series, designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 17A at 25°C (Tc), with a maximum power dissipation of 125W (Tc). The device exhibits a low on-resistance (Rds On) of 190mOhm at 8.5A and 10V. Key parameters include a gate charge (Qg) of 50 nC maximum at 10V, and input capacitance (Ciss) of 1950 pF maximum at 100V. Operating at junction temperatures up to 150°C, this MOSFET is housed in a TO-247-3 package, suitable for through-hole mounting. Applications for this component can be found in power factor correction, switch mode power supplies, and industrial power systems.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 100 V |
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