STW20NM65N
MOSFET N-CH 650V 19A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW20NM65N is an N-Channel Power MOSFET from the MDmesh™ II series. This component features a Drain-to-Source Voltage (Vdss) of 650 V and a continuous drain current (Id) of 19 A at 25°C. The device offers a maximum On-Resistance (Rds On) of 190 mOhm at 9.5 A and 10 V gate drive. With a maximum power dissipation of 160 W at 25°C (Tc), it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 70 nC at 10 V and an input capacitance (Ciss) of 2500 pF at 50 V. The TO-247-3 package facilitates through-hole mounting. This MOSFET is utilized in power factor correction, switch mode power supplies, and industrial applications.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 50 V |
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