STW20NM50
MOSFET N-CH 550V 20A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STW20NM50, an N-Channel MOSFET from the MDmesh™ series, offers a Drain to Source Voltage (Vdss) of 550V and a continuous drain current (Id) capability of 20A at 25°C. This through-hole component, housed in a TO-247-3 package, features a maximum Rds On of 250mOhm at 10A, 10V. With a maximum power dissipation of 214W (Tc) and an operating temperature up to 150°C (TJ), it is suitable for demanding applications. Key electrical parameters include a gate charge (Qg) of 56 nC @ 10V and input capacitance (Ciss) of 1480 pF @ 25V. This device finds application in power supply units, motor control, and industrial power systems.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1480 pF @ 25 V |
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