STW20NB50
MOSFET N-CH 500V 20A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STW20NB50 is a 500V N-Channel Power MOSFET from the PowerMESH™ series. This component features a continuous drain current of 20A (Tc) at 25°C and a maximum power dissipation of 250W (Tc). The Rds On is specified at a maximum of 250mOhm with a 10A drain current and 10V gate-source voltage. Key parameters include a Vgs(th) of 5V (max) at 250µA and a gate charge of 110 nC (max) at 10V. Input capacitance (Ciss) is rated at 4700 pF (max) at 25V. The STW20NB50 is housed in a TO-247-3 package for through-hole mounting and operates at an ambient temperature of up to 150°C (TJ). This device is suitable for applications in power supply units and industrial motor control.
Additional Information
Series: PowerMESH™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 25 V |
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