STW20N65M5
MOSFET N-CH 650V 18A TO247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW20N65M5 is a 650 V N-Channel Power MOSFET from the MDmesh™ V series. This component offers a continuous drain current capability of 18 A at 25°C (Tc) and a maximum power dissipation of 130 W (Tc). Key electrical characteristics include a drain-to-source voltage (Vdss) of 650 V, a maximum on-resistance (Rds On) of 190 mOhm at 9 A and 10 V, and a gate charge (Qg) of 45 nC at 10 V. The input capacitance (Ciss) is specified at 1345 pF maximum at 100 V. Designed for through-hole mounting in a TO-247-3 package, this MOSFET operates within a temperature range of -55°C to 150°C (TJ). Applications include high-voltage power switching in areas such as power factor correction, server power supplies, and industrial motor drives.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1345 pF @ 100 V |
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