STW200NF03
MOSFET N-CH 30V 120A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ II STW200NF03 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a low Rds(on) of 2.8mOhm at 60A and 10V Vgs, enabling efficient power switching. With a continuous drain current capability of 120A (Tc) and a drain-to-source voltage (Vdss) of 30V, it is suitable for high-power motor control, automotive systems, and power supply designs. The device offers a maximum power dissipation of 350W (Tc) and operates across a wide temperature range of -55°C to 175°C. Packaged in a TO-247-3 through-hole configuration, the STW200NF03 provides robust thermal performance and ease of integration into existing designs. Its gate charge is specified at 280 nC at 10V Vgs, and input capacitance (Ciss) is 10000 pF at 25V Vds.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10000 pF @ 25 V |
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