STW19NM65N
MOSFET N-CH 650V 15.5A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STW19NM65N is an N-channel Power MOSFET from the MDmesh™ II series, designed for high-efficiency power switching applications. This component offers a 650V drain-source voltage (Vdss) and a continuous drain current (Id) of 15.5A at 25°C (Tc). Key electrical characteristics include a maximum on-resistance (Rds On) of 270mOhm at 7.75A and 10V, and a gate charge (Qg) of 55 nC at 10V. With a maximum power dissipation of 150W (Tc) and an operating junction temperature of 150°C, it is suitable for demanding environments. The device features a TO-247-3 through-hole package, facilitating robust thermal management. This MOSFET is commonly employed in power factor correction (PFC) circuits, switch-mode power supplies (SMPS), and industrial motor controls.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 7.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 50 V |
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