STW18NK80Z
MOSFET N-CH 800V 19A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STW18NK80Z is an 800V N-Channel SuperMESH™ Power MOSFET designed for high-voltage applications. It features a continuous drain current capability of 19A (Tc) and a maximum power dissipation of 350W (Tc). With a low on-resistance of 380mOhm (max) at 10A, 10V and a gate charge of 250nC (max) at 10V, this device is suitable for efficient power switching. The TO-247-3 package facilitates through-hole mounting. Key electrical parameters include a Vgs(th) of 4.5V (max) at 150µA and a Vgs(max) of ±30V. This MOSFET is utilized in power supplies, industrial motor control, and lighting applications.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 150µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6100 pF @ 25 V |
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