STW18NK60Z
MOSFET N-CH 600V 16A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW18NK60Z is a SuperMESH™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 16A at 25°C. The device offers a low on-resistance (Rds On) of 360mOhm maximum at 8A and 10V Vgs, along with a maximum power dissipation of 230W (Tc). Its TO-247-3 through-hole package ensures robust thermal performance. Key electrical characteristics include a gate charge (Qg) of 170nC maximum at 10V and an input capacitance (Ciss) of 3540pF maximum at 25V. This MOSFET is suitable for use in power supplies, industrial automation, and renewable energy systems. It operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3540 pF @ 25 V |
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