STW17N62K3
MOSFET N-CH 620V 15.5A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW17N62K3 is a SuperMESH3™ N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-to-Source Voltage (Vdss) of 620 V and a continuous drain current (Id) of 15.5 A at 25°C (Tc). The Rds(On) is rated at a maximum of 380 mOhms at 7.5 A and 10 V gate drive. With a maximum power dissipation of 190 W at 25°C (Tc), it is suitable for demanding power conversion tasks. Key parameters include a Gate Charge (Qg) of 94 nC and an Input Capacitance (Ciss) of 2500 pF at 50 V. The MOSFET operates at junction temperatures up to 150°C and comes in a TO-247-3 through-hole package. Applications include power supplies, lighting, and industrial motor control.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 620 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 50 V |
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