STW16NM50N
MOSFET N-CH 500V 15A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STW16NM50N is an N-channel Power MOSFET from the MDmesh™ II series, designed for high-performance applications. Featuring a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 15 A at 25°C (Tc), this component offers a maximum power dissipation of 125 W (Tc). Its low on-resistance (Rds On) of 260 mOhm at 7.5 A and 10 V gate drive voltage, along with a gate charge (Qg) of 38 nC at 10 V, ensures efficient switching. The device operates at junction temperatures up to 150°C and is housed in a TO-247-3 package for through-hole mounting. This MOSFET is commonly utilized in power factor correction (PFC) circuits, switch-mode power supplies (SMPS), and industrial motor control applications.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 50 V |