STW16N65M5
MOSFET N-CH 650V 12A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STW16N65M5 is an N-Channel Power MOSFET from the MDmesh™ V series. This component offers a drain-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 12 A at 25°C (Tc), with a maximum power dissipation of 90 W (Tc). The device features a low on-resistance (Rds On) of 279 mOhm at 6 A and 10 V. Key parameters include a gate charge (Qg) of 31 nC at 10 V and input capacitance (Ciss) of 1250 pF at 100 V. Designed for through-hole mounting, it is supplied in a TO-247-3 package. This MOSFET is suitable for applications in power factor correction, switch mode power supplies, and general-purpose power switching. The maximum junction temperature is 150°C.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 279mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 100 V |
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