Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

STW160N75F3

Banner
productimage

STW160N75F3

MOSFET N-CH 75V 120A TO247-3

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STripFET™ STW160N75F3 is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 75V and a continuous Current Drain (Id) of 120A at 25°C, with a maximum power dissipation of 330W. The device exhibits a low on-resistance of 4mOhm at 60A and 10V gate drive, facilitated by an 85nC maximum gate charge (Qg) at 10V. Input capacitance (Ciss) is rated at 6750pF maximum at 25V. Packaged in a TO-247-3 through-hole configuration, this MOSFET operates within a temperature range of -55°C to 175°C. Its robust specifications make it suitable for power switching, motor control, and power supply designs across industrial and automotive sectors.

Additional Information

Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs4mOhm @ 60A, 10V
FET Feature-
Power Dissipation (Max)330W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6750 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy