STW15NM60ND
MOSFET N-CH 600V 14A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STW15NM60ND is a 600V N-Channel Power MOSFET from the FDmesh™ II series. This through-hole component, packaged in a TO-247-3, offers a continuous drain current (Id) of 14A at 25°C and a maximum power dissipation of 125W (Tc). Key electrical characteristics include a Vgs(th) of 5V (max) at 250µA, a gate charge (Qg) of 40 nC (max) at 10V, and input capacitance (Ciss) of 1250 pF (max) at 50V. The Rds On is rated at 299mOhm maximum at 7A and 10V. This device is suitable for high-voltage switching applications in power supplies, industrial automation, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 50 V |
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