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STW15NK50Z

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STW15NK50Z

MOSFET N-CH 500V 14A TO247-3

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STW15NK50Z is an N-Channel SuperMESH™ Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 14 A at 25°C. The STW15NK50Z offers a low On-Resistance (Rds On) of 340mOhm at 7A and 10V, with a maximum power dissipation of 160W (Tc). Key parameters include a Gate Charge (Qg) of 106 nC at 10V and an input capacitance (Ciss) of 2260 pF at 25V. The device is housed in a TO-247-3 through-hole package, suitable for demanding thermal management. This MOSFET technology is widely utilized in power supply units, industrial automation, and renewable energy systems. The operating temperature range is from -50°C to 150°C (TJ), with a maximum Gate-Source Voltage (Vgs) of ±30V.

Additional Information

Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-50°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs340mOhm @ 7A, 10V
FET Feature-
Power Dissipation (Max)160W (Tc)
Vgs(th) (Max) @ Id4.5V @ 100µA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2260 pF @ 25 V

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