STW15NK50Z
MOSFET N-CH 500V 14A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW15NK50Z is an N-Channel SuperMESH™ Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 14 A at 25°C. The STW15NK50Z offers a low On-Resistance (Rds On) of 340mOhm at 7A and 10V, with a maximum power dissipation of 160W (Tc). Key parameters include a Gate Charge (Qg) of 106 nC at 10V and an input capacitance (Ciss) of 2260 pF at 25V. The device is housed in a TO-247-3 through-hole package, suitable for demanding thermal management. This MOSFET technology is widely utilized in power supply units, industrial automation, and renewable energy systems. The operating temperature range is from -50°C to 150°C (TJ), with a maximum Gate-Source Voltage (Vgs) of ±30V.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2260 pF @ 25 V |
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