STW15NB50
MOSFET N-CH 500V 14.6A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW15NB50 is an N-Channel Power MOSFET from the PowerMESH™ series. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 14.6 A at 25°C. The device offers a low on-resistance of 360 mOhm maximum at 7.5 A and 10 V Vgs. With a high power dissipation capability of 190 W at 25°C and an operating junction temperature up to 150°C, this MOSFET is suitable for demanding applications. Key parameters include a gate charge of 80 nC maximum at 10 V and an input capacitance of 3400 pF maximum at 25 V. The STW15NB50 is housed in a TO-247-3 through-hole package and is widely utilized in industrial power supplies, lighting, and motor control applications.
Additional Information
Series: PowerMESH™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 25 V |
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