STW14NM65N
MOSFET N-CH 650V 12A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STW14NM65N is an N-Channel Power MOSFET from the MDmesh™ II series. This component features a drain-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 12 A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 380 mOhm at 6 A and 10 V. Key parameters include a gate charge (Qg) of 45 nC at 10 V and input capacitance (Ciss) of 1300 pF at 50 V. The device is housed in a TO-247-3 package with a through-hole mounting type and supports a maximum junction temperature of 150°C. Power dissipation is rated at 125 W (Tc). This MOSFET is utilized in applications such as power factor correction, switch mode power supplies, and high voltage converters.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 50 V |
Request a Quote
Clients Also Buy
STD13NM60N
MOSFET N-CH 600V 11A DPAK
STD14NM50NAG
MOSFET N-CH 500V 12A DPAK
STD8NM50N
MOSFET N-CH 500V 5A DPAK
