STW14NM50FD
MOSFET N-CH 500V 14A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW14NM50FD is a 500V N-Channel Power MOSFET from the FDmesh™ series. This device features a continuous drain current of 14A (Tc) and a maximum power dissipation of 160W (Tc). The TO-247-3 package facilitates through-hole mounting. Key electrical parameters include a drain-to-source voltage (Vdss) of 500V, a maximum Rds(On) of 400mOhm at 6A and 10V, and a gate charge (Qg) of 12nC at 10V. Input capacitance (Ciss) is rated at a maximum of 1000pF at 25V. Typical applications for this component include power factor correction (PFC) and switch mode power supplies (SMPS) across industrial, consumer electronics, and lighting sectors.
Additional Information
Series: FDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
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