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STW14NM50

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STW14NM50

MOSFET N-CH 550V 14A TO247-3

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STW14NM50 is an N-channel Power MOSFET from the MDmesh™ series. This through-hole component features a Drain-Source Voltage (Vdss) of 550V and a continuous drain current (Id) of 14A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 350mOhm at 6A and 10V, with a specified gate drive voltage of 10V. Key electrical parameters include a maximum Gate Charge (Qg) of 38nC at 10V and a maximum Input Capacitance (Ciss) of 1000pF at 25V. The STW14NM50 dissipates a maximum of 175W (Tc) and operates within a junction temperature range of 150°C. It is packaged in a TO-247-3 configuration. This component is suitable for applications in power supply, motor control, and industrial automation.

Additional Information

Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs350mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)175W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)550 V
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 25 V

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