STW14NM50
MOSFET N-CH 550V 14A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW14NM50 is an N-channel Power MOSFET from the MDmesh™ series. This through-hole component features a Drain-Source Voltage (Vdss) of 550V and a continuous drain current (Id) of 14A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 350mOhm at 6A and 10V, with a specified gate drive voltage of 10V. Key electrical parameters include a maximum Gate Charge (Qg) of 38nC at 10V and a maximum Input Capacitance (Ciss) of 1000pF at 25V. The STW14NM50 dissipates a maximum of 175W (Tc) and operates within a junction temperature range of 150°C. It is packaged in a TO-247-3 configuration. This component is suitable for applications in power supply, motor control, and industrial automation.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
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