STW14NK60Z
MOSFET N-CH 600V 13.5A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW14NK60Z is a SuperMESH™ series N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 13.5A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 500mOhm maximum at 6A and 10V gate drive. With a maximum power dissipation of 160W (Tc), it is suitable for demanding power conversion tasks. Key characteristics include a gate charge (Qg) of 75 nC maximum at 10V and input capacitance (Ciss) of 2220 pF maximum at 25V. The STW14NK60Z is housed in a TO-247-3 package, supporting through-hole mounting and operating across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly found in industrial power supplies, lighting, and renewable energy systems.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2220 pF @ 25 V |
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