STW13NB60
MOSFET N-CH 600V 13A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STW13NB60 is a high-performance N-Channel Power MOSFET from the PowerMESH™ series. This component features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) capability of 13 A at 25°C (Tc). With a maximum power dissipation of 190 W (Tc) and a low on-resistance (Rds On) of 540 mOhm at 6.5 A and 10 V drive, it is suitable for demanding applications. The device has a gate charge (Qg) of 82 nC at 10 V and an input capacitance (Ciss) of 2600 pF at 25 V. Packaged in a TO-247-3 through-hole configuration, it operates at junction temperatures up to 150°C. This MOSFET is commonly utilized in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: PowerMESH™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
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