STW13N95K3
MOSFET N-CH 950V 10A TO247-3Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STW13N95K3 is a SuperMESH3™ N-Channel Power MOSFET designed for high-voltage applications. This through-hole component features a Drain-Source Voltage (Vdss) of 950V and a continuous Drain Current (Id) of 10A at 25°C (Tc), with a maximum power dissipation of 190W (Tc). The Rds(On) is specified at 850mOhm maximum for 5A and 10V Vgs, with a typical gate charge (Qg) of 51nC at 10V. Input capacitance (Ciss) is 1620pF maximum at 100V Vds. Operating temperature ranges from -55°C to 150°C (TJ). The TO-247-3 package is suitable for applications in power factor correction, switch mode power supplies, and industrial motor control.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 950 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 100 V |
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