STW13N60M2
MOSFET N-CH 600V 11A TO247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STW13N60M2 is a 600V N-Channel MOSFET from the MDmesh™ II Plus series. This through-hole component, packaged in a TO-247-3, offers a continuous drain current of 11A (Tc) with a maximum power dissipation of 110W (Tc). Key electrical characteristics include a drain-source voltage (Vdss) of 600V, a maximum Rds(on) of 380mOhm at 5.5A and 10V drive, and a gate charge (Qg) of 17nC at 10V. The input capacitance (Ciss) is rated at 580pF at 100V. This device is suitable for applications in power factor correction (PFC), switch-mode power supplies (SMPS), and general-purpose power switching across various industrial and consumer electronics sectors. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: MDmesh™ II PlusRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 100 V |
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